Active and Passive Electronic Components

Combining with a static random-access memory (SRAM) and resistive memory (RRAM), an improved 8T2R nonvolatile SRAM (nvSRAM) memory cell is proposed in this study. With differential mode, a pair of 1T1R RRAM is added to 6T SRAM storage node. By optimizing the connection and layout scheme, the power consumption is reduced and the data stability is improved. The nvSRAM memory cell is realized with UMC CMOS 28 nm 1p9m process. When the power supply voltage is 0.9 V, the static noise/read/write margin is 0.35 V, 0.16 V, and 0.41 V, respectively. The data storage/restoration time is 0.21 ns and 0.18 ns, respectively, with an active area of 0.97 μm².

This study presents a survey of the most promising reported SAR ADC designs for biomedical applications, stressing advantages, disadvantages, and limitations, and concludes with a quantitative comparison. Recent progress in the development of a single SAR ADC architecture is reviewed. In wearable and biosensor systems, a very small amount of total power must be devoured by portable batteries or energy-harvesting circuits in order to function correctly. During the past decade, implementation of the high energy efficiency of SAR ADC has become the most necessary. So, several different implementation schemes for the main components of the SAR ADC have been proposed. In this review study, the various circuit architectures have been explained, beginning with the sample and hold (S/H) switching circuits, the dynamic comparator, the internal digital-to-analog converter (DAC), and the SAR control logic. In order to achieve low power consumption, numerous different configurations of dynamic comparator circuits are revealed. At the end of this overview, the evolutions of DAC architecture in distinct biomedical applications today can make a tradeoff between resolution, speed, and linearity, which represent the challenges of a single SAR ADC. For high resolution, the dual split capacitive DAC (CDAC) array technique and hybrid capacitor technique can be used. Also, for ultralow power consumption, various voltage switching schemes are achieved to reduce the number of switches. These schemes can save switching energy and reduce capacitor array area with high linearity. Additionally, to increase the speed of the conversion process, a prediction-based ADC design is employed. Therefore, SAR ADC is considered the ideal solution for biomedical applications.

High-voltage gain converter has a high-frequency use in some industrial fields, for instance, the fuel cell system, the photovoltaic system, electric vehicles, and the high-intensity discharge lamp. In order to solve the problem of the low-voltage gain of traditional boost converter, the double-boost converter with coupled inductance and doubled voltage is proposed, which connects the traditional boost converter in parallel. The voltage gain of the converter is further improved by introducing the voltage-doubled unit of the coupled inductance. Moreover, the clamp capacitor can absorb the leakage inductance in the circuit and reduce the voltage stress of the switch. In addition, two coupled inductors are magnetically collected; then, the loss of the core is analyzed under the same gain. The detailed analysis of the proposed converter and a comparison considering other topologies previously published in the literature are also presented in this article. In order to verify the proposed converter performance, a prototype has been built for a power of 200 W, input and output voltages of 12 and 84 V, respectively, and a switching frequency of 50 kHz. Experimental results validate the effectiveness of the theoretical analysis proving the satisfactory converter performance, whose peak efficiency is 95.5%.

In this paper, we propose a new type of tri-input tunneling field-effect transistor (Ti-TFET) that can compactly realize the “Majority-Not” logic function with a single transistor. It features an ingenious T-shaped channel and three independent-biasing gates deposited and patterned on its left, right, and upper sides, which greatly enhance the electrostatic control ability between any two gates of all the three gates on the device channel and thus increase its turn-on current. The total current density and energy band distribution in different biasing conditions are analyzed in detail by TCAD simulations. The turn-on current, leakage current, and ratio of turn-on/off current are optimized by choosing appropriate work function and body thickness. TCAD simulation results verify the expected characteristics of the proposed Ti-TFETs in different working states. Ti-TFETs can flexibly be used to implement a logic circuit with a compact style and thus reduce the number of transistors and stack height of the circuits. It provides a new technique to reduce the chip area and power consumption by saving the number of transistors.

A memristor is an electrical element, which has been conjectured in 1971 to complete the lumped circuit theory. Currently, researchers use memristor emulators through diodes, inductors, and other passive (or active) elements to study circuits with possible attractors, chaos, and ways of implementing nonlinear transformations for low-voltage novel computing paradigms. However, to date, such passive memristor emulators have been voltage-controlled. In this study, a novel circuit realization of a passive current-controlled passive inductorless emulator is established. It overcomes the lack of passive current-controlled memristor commercial devices, and it can be used as part of more sophisticated circuits. Moreover, it covers a gap in the state of the art because, currently, only passive circuit voltage-controlled memristor emulators and active current-controlled emulators have been developed and used. The emulator only uses two diodes, two resistors, and one capacitance and is passive. The formal theory and simulations validate the proposed circuit, and experimental measurements were performed. The parameter conditions of numerical simulations and experiments are consistent. Simulations were performed with an input current amplitude of and frequencies of up to and measurements were carried out with an input current amplitude of and frequency of in order to compare with the state of the art.

The over-current condition for a traction inverter can indicate flaws on control algorithms, interference on logic signals, hardware aging, or hardware misconduct. Thus, proper detection of over-current conditions during inverter operation is a critical item for inverter development and product validation. This paper reviews several widely used over-current detection methods and a few theoretically approved over-current detection methods. The main focus of this review includes the sensing bandwidth, sensing accuracy, and implementation complexity of the studied over-current detection methods. The advantages of those widely used methods and the application requirements for the theoretically and prototypingly approved methods are concluded by this review.